N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics
N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics
### MOSFET ，STMicroelectronics
得捷:
MOSFET N-CH 1000V 2.2A DPAK
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STD4NK100Z, 2.2 A, Vds=1000 V, 3引脚 DPAK TO-252封装
e络盟:
功率场效应管, MOSFET, N沟道, 1 kV, 2.2 A, 5.6 ohm, TO-252 DPAK, 表面安装
艾睿:
Make an effective common source amplifier using this STD4NK100Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 90000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
安富利:
Trans MOSFET N-CH 1000V 2.2A 3-Pin DPAK T/R
Verical:
Trans MOSFET N-CH 1KV 2.2A Automotive 3-Pin2+Tab DPAK T/R
针脚数 3
漏源极电阻 5.6 Ω
极性 N-CH
耗散功率 90 W
阈值电压 3.75 V
漏源极电压Vds 1000 V
连续漏极电流Ids 2.2A
上升时间 7.5 ns
输入电容Ciss 601pF @25VVds
下降时间 39 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅