N沟道30 V ， 0.0042 I© ， 75 A， DPAK ， TO- 220 ， IPAK ，短IPAK N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK
Use STMicroelectronics" power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 60000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
极性 N-CH
耗散功率 60 W
漏源极电压Vds 30 V
连续漏极电流Ids 75A
上升时间 30 ns
输入电容Ciss 2030pF @25VVds
额定功率Max 60 W
下降时间 12 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP75N3LLH6 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
AUIRL2203N 英飞凌 | 功能相似 | STP75N3LLH6和AUIRL2203N的区别 |
IRL8113PBF 国际整流器 | 功能相似 | STP75N3LLH6和IRL8113PBF的区别 |
IRF3709ZPBF 国际整流器 | 功能相似 | STP75N3LLH6和IRF3709ZPBF的区别 |