800V,1.6Ω,4.5A,N沟道功率MOSFET
N-Channel 800V 4.5A Tc 85W Tc Surface Mount DPAK
得捷:
MOSFET N-CH 800V 4.5A DPAK
立创商城:
N沟道 800V 4.5A
贸泽:
MOSFET POWER MOSFET
艾睿:
This STD6N80K5 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 110000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 800V 4.5A 3-Pin DPAK T/R
富昌:
N 沟道 800 V 1.6 mΩ 110 W 表面贴装 SuperMESH™ 5 功率 MOSFET - DPAK
Chip1Stop:
Trans MOSFET N-CH 800V 4.5A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 800V; 2.8A; 85W; DPAK
Verical:
Trans MOSFET N-CH 800V 4.5A 3-Pin2+Tab DPAK T/R
儒卓力:
**N-CH 800V 4,5A 1300mOhm TO252 **
力源芯城:
800V,1.6Ω,4.5A,N沟道功率MOSFET
通道数 1
针脚数 3
漏源极电阻 1.6 Ω
极性 N-CH
耗散功率 110 W
阈值电压 4 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
连续漏极电流Ids 4.5A
输入电容Ciss 255pF @100VVds
额定功率Max 110 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 85W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99