N 通道 STripFET™ F7 系列,STMicroelectronicsSTripFET™ F7 系列低电压 MOSFET 具有较低的设备通态电阻,降低了内部电容和栅极电荷,提供更快更高效的切换。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F7 系列,STMicroelectronics
STMicroelectronics STripFET™ F7 系列低电压 MOSFET 具有较低设备通态电阻,内部电容和栅极电荷降低,以便更快、更高效地切换。
得捷:
MOSFET N-CH 60V 100A D2PAK
欧时:
### N 通道 STripFET™ F7 系列,STMicroelectronicsSTripFET™ F7 系列低电压 MOSFET 具有较低的设备通态电阻,降低了内部电容和栅极电荷,提供更快更高效的切换。### MOSFET 晶体管,STMicroelectronics
立创商城:
N沟道 60V 100A
贸泽:
MOSFET
e络盟:
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 4 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STB100N6F7 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 125000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet f7 technology. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab D2PAK T/R
儒卓力:
**N-CH 60V 100A 5,6mOhm TO263 **
通道数 1
针脚数 3
漏源极电阻 5.6 mΩ
极性 N-CH
耗散功率 125 W
阈值电压 2 V
输入电容 1980 pF
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 100A
上升时间 55.5 ns
输入电容Ciss 1980pF @25VVds
下降时间 15 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99