








晶体管, MOSFET, P沟道, -12 A, -30 V, 0.024 ohm, -10 V, -2.5 V
表面贴装型 P 通道 30 V 12A(Tc) 40W(Tc) DPAK
欧时:
MOSFET P-Ch 30V 12A STripFET DPAK
得捷:
MOSFET P-CH 30V 12A DPAK
立创商城:
STD26P3LLH6
贸泽:
MOSFET P-CH 30V 0.024Ohm 12A STripFET VI
e络盟:
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.024 ohm, -10 V, -2.5 V
艾睿:
Make an effective common source amplifier using this STD26P3LLH6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 40000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with stripfet technology.
安富利:
Trans MOSFET P-CH 30V 12A 3-Pin DPAK T/R
富昌:
STD26P3LLH6 系列 30 V 12 A 0.03 Ohm P沟道 功率 MOSFET - TO-252-3
Chip1Stop:
Trans MOSFET P-CH 30V 12A 3-Pin2+Tab DPAK T/R
TME:
Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
Verical:
Trans MOSFET P-CH 30V 12A 3-Pin2+Tab DPAK T/R
Newark:
MOSFET, P-CH, -30V, -12A, TO-252-3
Win Source:
MOSFET P-CH 30V 12A DPAK
通道数 1
针脚数 3
漏源极电阻 0.024 Ω
极性 P-Channel
耗散功率 40 W
阈值电压 2.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 12A
上升时间 15 ns
输入电容Ciss 1450pF @25VVds
额定功率Max 40 W
下降时间 21 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 40W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17