P 沟道 STripFET™ 功率 MOSFET,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
P 沟道 STripFET™ 功率 MOSFET,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET P-CH 30V 5A 8SO
欧时:
### P 沟道 STripFET™ 功率 MOSFET,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STS5PF30L power MOSFET is for you. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with stripfet technology. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R
富昌:
STS5PF30L系列 P沟道 30 V 55 mOhm STripFET™ 功率MOSFET - SOIC-8
Chip1Stop:
Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R
Verical:
Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R
Newark:
# STMICROELECTRONICS STS5PF30L MOSFET Transistor, P Channel, 5 A, -30 V, 0.045 ohm, 10 V, 1.6 V
DeviceMart:
MOSFET P-CH 30V 5A 8-SOIC
Win Source:
MOSFET P-CH 30V 5A 8-SOIC
额定电压DC -30.0 V
额定电流 -5.00 A
漏源极电阻 0.045 Ω
极性 P-Channel
耗散功率 2.5 W
阈值电压 1.6 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±16.0 V
连续漏极电流Ids 5.00 A
上升时间 35 ns
输入电容Ciss 1350pF @25VVds
额定功率Max 2.5 W
下降时间 35 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.25 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STS5PF30L ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDS9435A 飞兆/仙童 | 功能相似 | STS5PF30L和FDS9435A的区别 |
FDS9400A 飞兆/仙童 | 功能相似 | STS5PF30L和FDS9400A的区别 |
IRF7205TRPBF 国际整流器 | 功能相似 | STS5PF30L和IRF7205TRPBF的区别 |