STMICROELECTRONICS STB12NM50N 晶体管, MOSFET, N沟道, 11 A, 550 V, 380 mohm, 10 V, 3 V
N-Channel 500V 11A Tc 100W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 500V 11A D2PAK
e络盟:
STMICROELECTRONICS STB12NM50N 晶体管, MOSFET, N沟道, 11 A, 550 V, 380 mohm, 10 V, 3 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STB12NM50N power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 100000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with mdmesh ii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 500V 11A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 500V 11A 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 500V 11A D2PAK
额定电压DC 500 V
额定电流 11.0 A
针脚数 3
漏源极电阻 380 mΩ
极性 N-Channel
耗散功率 100 W
阈值电压 3 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 6.70 A, 11.0 A
上升时间 15 ns
输入电容Ciss 940pF @50VVds
额定功率Max 100 W
下降时间 14 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温Max 150 ℃
耗散功率Max 100W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB12NM50N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SPB12N50C3 英飞凌 | 功能相似 | STB12NM50N和SPB12N50C3的区别 |
STB12NM50FD 意法半导体 | 功能相似 | STB12NM50N和STB12NM50FD的区别 |
STB12NM50-1 意法半导体 | 功能相似 | STB12NM50N和STB12NM50-1的区别 |