STB12NM50N

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STB12NM50N概述

STMICROELECTRONICS  STB12NM50N  晶体管, MOSFET, N沟道, 11 A, 550 V, 380 mohm, 10 V, 3 V

N-Channel 500V 11A Tc 100W Tc Surface Mount D2PAK


得捷:
MOSFET N-CH 500V 11A D2PAK


e络盟:
STMICROELECTRONICS  STB12NM50N  晶体管, MOSFET, N沟道, 11 A, 550 V, 380 mohm, 10 V, 3 V


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STB12NM50N power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 100000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with mdmesh ii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 500V 11A 3-Pin2+Tab D2PAK T/R


Chip1Stop:
Trans MOSFET N-CH 500V 11A 3-Pin2+Tab D2PAK T/R


Win Source:
MOSFET N-CH 500V 11A D2PAK


STB12NM50N中文资料参数规格
技术参数

额定电压DC 500 V

额定电流 11.0 A

针脚数 3

漏源极电阻 380 mΩ

极性 N-Channel

耗散功率 100 W

阈值电压 3 V

漏源极电压Vds 500 V

漏源击穿电压 500 V

连续漏极电流Ids 6.70 A, 11.0 A

上升时间 15 ns

输入电容Ciss 940pF @50VVds

额定功率Max 100 W

下降时间 14 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

工作结温Max 150 ℃

耗散功率Max 100W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STB12NM50N
型号: STB12NM50N
描述:STMICROELECTRONICS  STB12NM50N  晶体管, MOSFET, N沟道, 11 A, 550 V, 380 mohm, 10 V, 3 V
替代型号STB12NM50N
型号/品牌 代替类型 替代型号对比

STB12NM50N

ST Microelectronics 意法半导体

当前型号

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