STMICROELECTRONICS STB11NK50ZT4 晶体管, MOSFET, N沟道, 4.5 A, 500 V, 480 mohm, 10 V, 3.75 V
The is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
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- Extremely high dV/dt capability
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- 100% Avalanche tested
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- Gate charge minimized
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- Very low intrinsic capacitances
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- -55 to 150°C Operating junction temperature range
额定电压DC 500 V
额定电流 10.0 A
针脚数 3
漏源极电阻 0.48 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 3.75 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 4.50 A
上升时间 18 ns
输入电容Ciss 1390pF @25VVds
额定功率Max 125 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, Power Management, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB11NK50ZT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB11N52K3 意法半导体 | 类似代替 | STB11NK50ZT4和STB11N52K3的区别 |
FQB9N50CTM 飞兆/仙童 | 功能相似 | STB11NK50ZT4和FQB9N50CTM的区别 |
IRF840ASPBF 威世 | 功能相似 | STB11NK50ZT4和IRF840ASPBF的区别 |