N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
得捷:
MOSFET N-CH 950V 12A TO220
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STP15N95K5, 12 A, Vds=950 V, 3引脚 TO-220封装
立创商城:
N沟道 950V 12A
贸泽:
MOSFET N-CH 950V 0.41Ohm typ. 12A MDmesh K5
e络盟:
晶体管, MOSFET, N沟道, 12 A, 950 V, 0.41 ohm, 10 V, 4 V
艾睿:
Make an effective common source amplifier using this STP15N95K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 5 technology.
安富利:
Trans MOSFET N-CH 950V 12A 3-Pin TO-220 Tube
富昌:
单 N沟道 950 V 0.5 Ω 250 W 法兰安装 功率 Mosfet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 950V 12A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 950V 12A 3-Pin3+Tab TO-220AB Tube
通道数 1
针脚数 3
漏源极电阻 410 mΩ
耗散功率 170 W
阈值电压 4 V
漏源极电压Vds 950 V
漏源击穿电压 950 V
输入电容Ciss 900pF @100VVds
额定功率Max 250 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 170W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free