STMICROELECTRONICS STP85N3LH5 晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
The is a N-channel Power MOSFET utilizes the 5th generation of design rules of proprietary STripFET™ technology. The lowest available RDS ON- .
- Qg, in the standard packages, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.
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- RDS ON x Qg industry benchmark
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- Extremely low ON-resistance RDS ON
- .
- High avalanche ruggedness
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- Low gate drive power losses
针脚数 3
漏源极电阻 0.0046 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 2.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 40.0 A
上升时间 14 ns
输入电容Ciss 1850pF @25VVds
额定功率Max 70 W
下降时间 10.8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 175℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP85N3LH5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDP8870 飞兆/仙童 | 功能相似 | STP85N3LH5和FDP8870的区别 |
FDP8860 飞兆/仙童 | 功能相似 | STP85N3LH5和FDP8860的区别 |
FDP8874 飞兆/仙童 | 功能相似 | STP85N3LH5和FDP8874的区别 |