N沟道60V - 0.014ヘ - 60A - D2PAK / I2PAK STripFET⑩ II功率MOSFET N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK STripFET⑩ II Power MOSFET
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Applications
■ Switching application
额定电压DC 60.0 V
额定电流 60.0 A
漏源极电阻 15.0 mΩ
极性 N-Channel
耗散功率 110 W
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 60.0 A
上升时间 108 ns
输入电容Ciss 1810pF @25VVds
额定功率Max 110 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -65℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB60NF06T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDB13AN06A0 飞兆/仙童 | 功能相似 | STB60NF06T4和FDB13AN06A0的区别 |
STP200NF03 意法半导体 | 功能相似 | STB60NF06T4和STP200NF03的区别 |