N 通道 STripFET™ H7 系列,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ H7 系列,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 100V 80A H2PAK-2
立创商城:
N沟道 100V 80A
欧时:
### N 通道 STripFET™ H7 系列,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
艾睿:
This STH80N10F7-2 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 110000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet vii technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 100V 80A 3-Pin H2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab H2PAK T/R
Verical:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab H2PAK T/R
儒卓力:
**N-CH 100V 80A 9,5mOhm H2PAK-2 **
耗散功率 110 W
漏源极电压Vds 100 V
上升时间 32 ns
输入电容Ciss 3100pF @50VVds
下降时间 13 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.17 mm
高度 4.8 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99