N沟道200 V, 0.019 Ω , 83 A, TO- 247低栅极电荷的STripFET ™功率MOSFET N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™ Power MOSFET
This power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
通道数 1
漏源极电阻 23 mΩ
极性 N-CH
耗散功率 300 W
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 83A
上升时间 138 ns
输入电容Ciss 5736pF @25VVds
额定功率Max 300 W
下降时间 142 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.75 mm
宽度 5.15 mm
高度 20.15 mm
封装 TO-247-3
工作温度 -50℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STW90NF20 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRFP4227PBF 国际整流器 | 功能相似 | STW90NF20和IRFP4227PBF的区别 |
IXFH96N20P IXYS Semiconductor | 功能相似 | STW90NF20和IXFH96N20P的区别 |
IXFH80N20Q IXYS Semiconductor | 功能相似 | STW90NF20和IXFH80N20Q的区别 |