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N 通道 MDmesh™,800V/1500V,STMicroelectronics
得捷:
MOSFET N-CH 1500V 2.5A TO220AB
欧时:
STMicroelectronics MDmesh 系列 Si N沟道 MOSFET STP3N150, 2.5 A, Vds=1500 V, 3引脚 TO-220封装
立创商城:
STP3N150
e络盟:
晶体管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
艾睿:
Amplify electronic signals and switch between them with the help of STMicroelectronics&s; STP3N150 power MOSFET. Its maximum power dissipation is 140000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes powermesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin3+Tab TO-220 Tube
富昌:
N-Channel 1.5 kV 9 Ω Flange Mount PowerMESH Power MosFet - TO-220
Chip1Stop:
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Verical:
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin3+Tab TO-220AB Tube
Newark:
# STMICROELECTRONICS STP3N150 Power MOSFET, N Channel, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
儒卓力:
**N-CH 1.5kV 3A 9000mOhm TO220-3 **
力源芯城:
1500V,6Ω,2.5A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 1500V 2.5A TO-220
针脚数 3
漏源极电阻 6 Ω
极性 N-Channel
耗散功率 140 W
阈值电压 4 V
输入电容 939 pF
漏源极电压Vds 1500 V
连续漏极电流Ids 2.50 A
上升时间 47 ns
输入电容Ciss 939pF @25VVds
额定功率Max 140 W
下降时间 61 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 140W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP3N150 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STW3N150 意法半导体 | 功能相似 | STP3N150和STW3N150的区别 |