












N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 300V 60A MAX247
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STY60NK30Z, 60 A, Vds=300 V, 3引脚 Max247封装
立创商城:
N沟道 300V 60A
艾睿:
Compared to traditional transistors, STY60NK30Z power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 450000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 300V 60A 3-Pin3+Tab Max247 Tube
TME:
Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247
Verical:
Trans MOSFET N-CH 300V 60A 3-Pin3+Tab Max247 Tube
Newark:
MOSFET, N-CH, 300V, 60A, MAX-247-3
力源芯城:
300V,60A,33mΩ,N沟道功率MOSFET
Win Source:
MOSFET N-CH 300V 60A MAX247
额定电压DC 300 V
额定电流 60.0 A
针脚数 3
漏源极电阻 0.033 Ω
极性 N-Channel
耗散功率 450 W
阈值电压 3.75 V
漏源极电压Vds 300 V
漏源击穿电压 300 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 60.0 A
上升时间 90 ns
输入电容Ciss 7200pF @25VVds
额定功率Max 450 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 450W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.9 mm
宽度 5.3 mm
高度 20.3 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STY60NK30Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IXFK73N30 IXYS Semiconductor | 功能相似 | STY60NK30Z和IXFK73N30的区别 |
IXFK52N30Q IXYS Semiconductor | 功能相似 | STY60NK30Z和IXFK52N30Q的区别 |
IXFX90N30 IXYS Semiconductor | 功能相似 | STY60NK30Z和IXFX90N30的区别 |