STL36N55M5

N 通道 MDmesh™ M5 系列，STMicroelectronicsMDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™ M5 系列，STMicroelectronics

MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。

### MOSFET ，STMicroelectronics

欧时:
STMicroelectronics MDmesh M5 系列 Si N沟道 MOSFET STL36N55M5, 22 A, Vds=600 V, 5引脚 PowerFLAT HV封装

得捷:
MOSFET N-CH 550V 22.5A 4PWRFLAT

e络盟:
晶体管, MOSFET, N沟道, 22.5 A, 550 V, 0.066 ohm, 10 V, 4 V

艾睿:
Compared to traditional transistors, STL36N55M5 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology.

安富利:
Trans MOSFET N-CH 550V 22.5A 4-Pin Power Flat T/R

富昌:
POWER FLAT MLPD 8X8 4L

Chip1Stop:
Trans MOSFET N-CH 550V 22.5A 4-Pin Power Flat T/R

Verical:
Trans MOSFET N-CH Si 550V 22.5A 5-Pin Power Flat T/R

DeviceMart:
MOSF N CH 550V 22.5A PWRFLT8X8HV