STMICROELECTRONICS STP7NM50N 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 700 mohm, 10 V, 3 V
N-Channel 500V 5A Tc 45W Tc Through Hole TO-220AB
得捷:
MOSFET N-CH 500V 5A TO220AB
e络盟:
# STMICROELECTRONICS STP7NM50N 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 700 mohm, 10 V, 3 V
艾睿:
Make an effective common source amplifier using this STP7NM50N power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology.
Win Source:
MOSFET N-CH 500V 5A TO-220
针脚数 3
漏源极电阻 700 mΩ
极性 N-Channel
耗散功率 45 W
阈值电压 3 V
漏源极电压Vds 500 V
连续漏极电流Ids 2.50 A
上升时间 5 ns
输入电容Ciss 400pF @50VVds
额定功率Max 45 W
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP7NM50N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD8NM50N 意法半导体 | 功能相似 | STP7NM50N和STD8NM50N的区别 |
STD7NM50N 意法半导体 | 功能相似 | STP7NM50N和STD7NM50N的区别 |
STD7NM50N-1 意法半导体 | 功能相似 | STP7NM50N和STD7NM50N-1的区别 |