STMICROELECTRONICS STN4NF20L 晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V 新
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the power MOSFET. Its maximum power dissipation is 3300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
通道数 1
针脚数 4
漏源极电阻 1.1 Ω
极性 N-Channel
耗散功率 3.3 W
阈值电压 2 V
漏源极电压Vds 200 V
连续漏极电流Ids 1A
上升时间 2 ns
输入电容Ciss 150pF @25VVds
额定功率Max 3.3 W
下降时间 10.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.3W Tc
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.5 mm
高度 1.8 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STN4NF20L ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STN3N45K3 意法半导体 | 类似代替 | STN4NF20L和STN3N45K3的区别 |
STN1NF20 意法半导体 | 类似代替 | STN4NF20L和STN1NF20的区别 |
FQT4N20LTF 飞兆/仙童 | 功能相似 | STN4NF20L和FQT4N20LTF的区别 |