









晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 3 V
N-Channel 200V 1A Tc 2W Ta Surface Mount SOT-223
得捷:
MOSFET N-CH 200V 1A SOT-223
立创商城:
N沟道 200V 1A
贸泽:
MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II
e络盟:
功率场效应管, MOSFET, N沟道, 200 V, 1 A, 1.1 ohm, SOT-223, 表面安装
艾睿:
As an alternative to traditional transistors, the STN1NF20 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 200V 1A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans MOSFET N-CH 200V 1A 4-Pin3+Tab SOT-223 T/R
儒卓力:
**N-CH 200V 1A 1100mOhm SOT-223 **
DeviceMart:
MOSFET N-CH 200V 1A SOT-223
通道数 1
针脚数 4
漏源极电阻 1.1 Ω
耗散功率 2 W
阈值电压 4 V
漏源极电压Vds 200 V
上升时间 5.6 ns
输入电容Ciss 90pF @25VVds
额定功率Max 2 W
下降时间 12.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2W Ta
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STN1NF20 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |