STD1NK60-1

STMICROELECTRONICS  STD1NK60-1  功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STD1NK60-1, 1 A, Vds=600 V, 3引脚 IPAK TO-251封装

得捷:
MOSFET N-CH 600V 1A IPAK

贸泽:
MOSFET N-Ch 600 Volt 1.0 A

e络盟:
STMICROELECTRONICS  STD1NK60-1  功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V

艾睿:
Create an effective common drain amplifier using this STD1NK60-1 power MOSFET from STMicroelectronics. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.

安富利:
Trans MOSFET N-CH 600V 1A 3-Pin3+Tab IPAK Tube

Chip1Stop:
Trans MOSFET N-CH 600V 1A 3-Pin3+Tab IPAK Tube

TME:
Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK

Verical:
Trans MOSFET N-CH 600V 1A 3-Pin3+Tab IPAK Tube

儒卓力:
**N-CH 600V 1A 8000mOhm TO251-3 **

DeviceMart:
MOSFET N-CH 600V 1A IPAK

Win Source:
MOSFET N-CH 600V 1A IPAK