











MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ H7 系列,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
欧时:
N 通道 STripFET™ H7 系列,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
得捷:
MOSFET N CH 100V 80A DPAK
立创商城:
N沟道 100V 80A
艾睿:
Create an effective common drain amplifier using this STD100N10F7 power MOSFET from STMicroelectronics. Its maximum power dissipation is 120000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab DPAK T/R
Newark:
MOSFET, N-CH, 100V, 80A, TO-252-3
DeviceMart:
MOSFET N CH 100V 80A DPAK
Win Source:
MOSFET N CH 100V 80A DPAK
针脚数 3
漏源极电阻 0.0068 Ω
极性 N-Channel
耗散功率 120 W
阈值电压 4.5 V
输入电容 4369 pF
漏源极电压Vds 100 V
连续漏极电流Ids 80A
上升时间 40 ns
输入电容Ciss 4369pF @50VVds
额定功率Max 120 W
下降时间 15 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 120W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 医用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99