STP1N105K3

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STP1N105K3概述

MOSFET N-Ch 1050V 8Ω 1.4A SuperMESH3 MOS

通孔 N 通道 1050 V 1.4A(Tc) 60W(Tc) TO-220


得捷:
MOSFET N-CH 1050V 1.4A TO220


艾睿:
Compared to traditional transistors, STP1N105K3 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.


安富利:
Trans MOSFET N-CH 1.05KV 1.4A 3-Pin3+Tab TO-220 Tube


Chip1Stop:
Trans MOSFET N-CH 1.05KV 1.4A 3-Pin3+Tab TO-220 Tube


Verical:
Trans MOSFET N-CH 1.05KV 1.4A 3-Pin3+Tab TO-220AB Tube


STP1N105K3中文资料参数规格
技术参数

通道数 1

耗散功率 60 W

阈值电压 4.5 V

漏源极电压Vds 1050 V

上升时间 7 ns

输入电容Ciss 180pF @100VVds

额定功率Max 60 W

下降时间 50 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 60W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STP1N105K3
型号: STP1N105K3
描述:MOSFET N-Ch 1050V 8Ω 1.4A SuperMESH3 MOS

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