STMICROELECTRONICS STP11NM60 场效应管, MOSFET, N沟道, 650V, 11A, TO-220
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General features
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching application
额定电压DC 600 V
额定电流 11.0 A
针脚数 3
漏源极电阻 0.45 Ω
极性 N-Channel
耗散功率 160 W
阈值电压 4 V
漏源极电压Vds 650 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 11.0 A
上升时间 20 ns
输入电容Ciss 1000pF @25VVds
额定功率Max 160 W
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 160W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Contains Lead
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP11NM60 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP13N60M2 意法半导体 | 类似代替 | STP11NM60和STP13N60M2的区别 |
FCP11N60 飞兆/仙童 | 功能相似 | STP11NM60和FCP11N60的区别 |
FCP11N60F 飞兆/仙童 | 功能相似 | STP11NM60和FCP11N60F的区别 |