





N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 800V 2.5A POWERFLAT
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STL4N80K5, 2.5 A, Vds=800 V, 8引脚 PowerFLAT封装
贸泽:
MOSFET N-Ch 800V 2.1Ohm typ 2.5A Zener-protected
e络盟:
功率场效应管, MOSFET, N沟道, 800 V, 2.5 A, 2.1 ohm, PowerFLAT, 表面安装
艾睿:
Compared to traditional transistors, STL4N80K5 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 38000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 800V 2.5A 8-Pin PowerFLAT T/R
富昌:
STL4N80K5 系列 800 V 2.5 Ohm N-沟道 功率 Mosfet - PowerFLAT™ 5x6 VHV
Chip1Stop:
Trans MOSFET N-CH 800V 2.5A 8-Pin Power Flat EP T/R
Verical:
Trans MOSFET N-CH 800V 2.5A 8-Pin Power Flat EP T/R
通道数 1
针脚数 8
漏源极电阻 2.5 Ω
耗散功率 38 W
阈值电压 4 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
上升时间 15 ns
输入电容Ciss 175pF @100VVds
额定功率Max 38 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 38W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-5x6-VHV-8
长度 6.35 mm
宽度 5.4 mm
高度 0.95 mm
封装 PowerFLAT-5x6-VHV-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free