STP12NK80Z

STMICROELECTRONICS  STP12NK80Z  功率场效应管, MOSFET, N沟道, 10.5 A, 800 V, 750 mohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics

得捷:
MOSFET N-CH 800V 10.5A TO220AB

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STP12NK80Z, 10.5 A, Vds=800 V, 3引脚 TO-220封装

贸泽:
MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH

艾睿:
This STP12NK80Z power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 190000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology.

安富利:
Trans MOSFET N-CH 800V 10.5A 3-Pin3+Tab TO-220 Tube

Chip1Stop:
Trans MOSFET N-CH 800V 10.5A 3-Pin3+Tab TO-220 Tube

TME:
Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3

Verical:
Trans MOSFET N-CH 800V 10.5A 3-Pin3+Tab TO-220AB Tube