STU4N80K5

N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics

### MOSFET ，STMicroelectronics

欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STU4N80K5, 3 A, Vds=800 V, 3引脚 IPAK TO-251封装

立创商城:
N沟道 800V 3A

得捷:
MOSFET N-CH 800V 3A IPAK

e络盟:
晶体管, MOSFET, N沟道, 2.5 A, 800 V, 2.1 ohm, 10 V, 4 V

艾睿:
Compared to traditional transistors, STU4N80K5 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 800V 3A 3-Pin IPAK Tube

Chip1Stop:
Trans MOSFET N-CH 800V 3A 3-Pin3+Tab IPAK Tube

Verical:
Trans MOSFET N-CH 800V 3A 3-Pin3+Tab IPAK Tube

Win Source:
MOSFET N-CH 800V 3A IPAK / N-Channel 800 V 3A Tc 60W Tc Through Hole TO-251 IPAK