STP7N105K5

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STP7N105K5概述

N沟道 1.05kV 4A

N-Channel 1050V 4A Tc 110W Tc Through Hole TO-220


得捷:
MOSFET N-CH 1050V 4A TO220


立创商城:
N沟道 1.05kV 4A


贸泽:
MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-220 package


艾睿:
Increase the current or voltage in your circuit with this STP7N105K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh 5 technology.


安富利:
Trans MOSFET N-CH 1050V 4A 3-Pin TO-220 Tube


富昌:
TO 220 AB NON ISOL


Verical:
Trans MOSFET N-CH 1.05KV 4A 3-Pin3+Tab TO-220AB Tube


儒卓力:
**N-CH 1050V 4A 2000mOhm TO220-3 **


Win Source:
MOSFET N-CH 1050V 4A TO220 / N-Channel 1050 V 4A Tc 110W Tc Through Hole TO-220


STP7N105K5中文资料参数规格
技术参数

极性 N-CH

耗散功率 110 W

漏源极电压Vds 1050 V

连续漏极电流Ids 4A

上升时间 7 ns

输入电容Ciss 380pF @100VVds

下降时间 25 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 110W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STP7N105K5
型号: STP7N105K5
描述:N沟道 1.05kV 4A

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