STMICROELECTRONICS STD40NF03LT4 晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
表面贴装型 N 通道 40A(Tc) 80W(Tc) DPAK
得捷:
MOSFET N-CH 30V 40A DPAK
立创商城:
N沟道 30V 40A
e络盟:
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.009 ohm, 10 V, 1 V
艾睿:
This STD40NF03LT4 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 80000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet ii technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 40A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 30V 40A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 30V 40A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD40NF03LT4 MOSFET Transistor, N Channel, 20 A, 30 V, 9 mohm, 10 V, 1 V
Win Source:
N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET
额定电压DC 30.0 V
额定电流 40.0 A
通道数 1
针脚数 3
漏源极电阻 0.009 Ω
极性 N-Channel
耗散功率 80 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 20.0 A
上升时间 165 ns
输入电容Ciss 1440pF @25VVds
额定功率Max 80 W
下降时间 25 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 80W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
宽度 6.2 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 计算机和计算机周边, 电源管理, Power Management, Computers & Computer Peripherals, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD40NF03LT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDD6690A 飞兆/仙童 | 功能相似 | STD40NF03LT4和FDD6690A的区别 |
FDD8878 飞兆/仙童 | 功能相似 | STD40NF03LT4和FDD8878的区别 |
IRLR3103TRPBF 国际整流器 | 功能相似 | STD40NF03LT4和IRLR3103TRPBF的区别 |