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N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 950V 10A TO220
立创商城:
N沟道 950V 10A
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 Si N沟道 MOSFET STP13N95K3, 10 A, Vds=950 V, 3引脚 TO-220封装
e络盟:
晶体管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
艾睿:
Make an effective common source amplifier using this STP13N95K3 power MOSFET from STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology.
安富利:
Trans MOSFET N-CH 950V 10A 3-Pin3+Tab TO-220 Tube
富昌:
N-Channel 950 V 0.85 Ohm Flange Mount SuperMESH3™ Power MOSFET - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 950V 10A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 950V 10A 3-Pin3+Tab TO-220AB Tube
Newark:
# STMICROELECTRONICS STP13N95K3 MOSFET Transistor, N Channel, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
力源芯城:
950V,10A,N沟道MOSFET
Win Source:
MOSFET N-CH 950V 10A TO-220
针脚数 3
漏源极电阻 0.68 Ω
极性 N-Channel
耗散功率 190 W
阈值电压 4 V
漏源极电压Vds 950 V
连续漏极电流Ids 10A
上升时间 16 ns
输入电容Ciss 1620pF @100VVds
额定功率Max 190 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, 电源管理, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP13N95K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP13NM60N 意法半导体 | 类似代替 | STP13N95K3和STP13NM60N的区别 |
STP18N55M5 意法半导体 | 类似代替 | STP13N95K3和STP18N55M5的区别 |
STP6N120K3 意法半导体 | 类似代替 | STP13N95K3和STP6N120K3的区别 |