N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
### MOSFET ,STMicroelectronics
立创商城:
N沟道 620V 3.8A
得捷:
MOSFET N-CH 620V 3.8A TO220FP
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 Si N沟道 MOSFET STF4N62K3, 3.8 A, Vds=620 V, 3引脚 TO-220FP封装
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STF4N62K3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 25000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 620V 3.8A 3-Pin3+Tab TO-220FP Tube
Chip1Stop:
Trans MOSFET N-CH 620V 3.8A 3-Pin3+Tab TO-220FP Tube
TME:
Transistor: N-MOSFET; unipolar; 620V; 2A; 25W; TO220FP
Verical:
Trans MOSFET N-CH 620V 3.8A 3-Pin3+Tab TO-220FP Tube
力源芯城:
620V,1.7Ω,3.8A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 620V 3.8A TO-220FP
漏源极电阻 1.7 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 3.75 V
漏源极电压Vds 620 V
上升时间 9 ns
输入电容Ciss 550pF @50VVds
额定功率Max 25 W
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 25W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STF4N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP4N62K3 意法半导体 | 类似代替 | STF4N62K3和STP4N62K3的区别 |
STP150N3LLH6 意法半导体 | 类似代替 | STF4N62K3和STP150N3LLH6的区别 |
STH180N10F3-2 意法半导体 | 功能相似 | STF4N62K3和STH180N10F3-2的区别 |