STB11NM60T4

N 通道 MDmesh™，600V/650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™，600V/650V，STMicroelectronics

### MOSFET ，STMicroelectronics

得捷:
MOSFET N-CH 650V 11A D2PAK

欧时:
N 通道 MDmesh™，600V/650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

贸泽:
MOSFET N-Ch 600 Volt 11 Amp

e络盟:
晶体管, MOSFET, N沟道, 5.5 A, 650 V, 0.4 ohm, 10 V, 4 V

艾睿:
Compared to traditional transistors, STB11NM60T4 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 160000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C. This device utilizes mdmesh technology.

安富利:
Trans MOSFET N-CH 600V 11A 3-Pin2+Tab D2PAK T/R

Chip1Stop:
Trans MOSFET N-CH 600V 11A 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 600V 11A 3-Pin2+Tab D2PAK T/R

Newark:
Power MOSFET, N Channel, 5.5 A, 650 V, 400 mohm, 10 V, 4 V

儒卓力:
**N-CH 600V 11A 450mOhm TO263-3 **

Win Source:
MOSFET N-CH 650V 11A D2PAK