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N 通道 MDmesh™ M2 系列,STMicroelectronics
STMicroelecronics 的一系列高电压功率 MOSFET。 MDmesh M2 系列凭借其低栅极电荷和出色的输出电容特性,非常适合用于谐振型开关电源(LLC 转换器)。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 600V 5A DPAK
立创商城:
N沟道 600V 5A
欧时:
STMicroelectronics MDmesh M2 系列 Si N沟道 MOSFET STD7N60M2, 5 A, Vds=650 V, 3引脚 DPAK TO-252封装
e络盟:
晶体管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
艾睿:
Create an effective common drain amplifier using this STD7N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 5A 3-Pin DPAK T/R
富昌:
N-Channel 600 V 5 A 0.95 Ohm SMT Power Mosfet - DPAK-3
Chip1Stop:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; DPAK
Verical:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD7N60M2 MOSFET, N-CH, 600V, 5A, TO-252-3 New
儒卓力:
**N-CH 600V 5A 950mOhm TO252 **
力源芯城:
600V,0.86Ω,5A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 600V DPAK
针脚数 3
漏源极电阻 0.86 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 3 V
漏源极电压Vds 600 V
上升时间 7.2 ns
输入电容Ciss 271pF @100VVds
额定功率Max 60 W
下降时间 15.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99