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N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 620V 2.7A TO220FP
立创商城:
N沟道 620V 2.7A
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 Si N沟道 MOSFET STF3N62K3, 2.7 A, Vds=620 V, 3引脚 TO-220FP封装
艾睿:
Make an effective common gate amplifier using this STF3N62K3 power MOSFET from STMicroelectronics. Its maximum power dissipation is 20000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh 3 technology.
安富利:
Trans MOSFET N-CH 620V 2.7A 3-Pin3+Tab TO-220FP Tube
Chip1Stop:
Trans MOSFET N-CH 620V 2.7A 3-Pin3+Tab TO-220FP Tube
Verical:
Trans MOSFET N-CH 620V 2.7A 3-Pin3+Tab TO-220FP Tube
力源芯城:
620V,2.2Ω,2.7A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 620V 2.7A TO-220FP
漏源极电阻 2.2 Ω
极性 N-Channel
耗散功率 20 W
阈值电压 3.75 V
漏源极电压Vds 620 V
上升时间 6.8 ns
输入电容Ciss 385pF @25VVds
额定功率Max 20 W
下降时间 15.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 20W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17