N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics
得捷:
MOSFET N-CH 800V 2.5A IPAK
立创商城:
N沟道 800V 2.5A
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STU3N80K5, 2.5 A, Vds=800 V, 3引脚
贸泽:
MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protected
艾睿:
Make an effective common gate amplifier using this STU3N80K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
安富利:
Trans MOSFET N-CH 800V 2.5A 3-Pin IPAK Tube
Chip1Stop:
Trans MOSFET N-CH 800V 2.5A 3-Pin3+Tab IPAK Tube
Verical:
Trans MOSFET N-CH 800V 2.5A 3-Pin3+Tab IPAK Tube
通道数 1
漏源极电阻 3.5 Ω
极性 N-CH
耗散功率 60 W
阈值电压 3 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
连续漏极电流Ids 2.5A
上升时间 7.5 ns
输入电容Ciss 130pF @100VVds
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free