N 通道 MDmesh™,800V/1500V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N-Channel 800V 6.5A Tc 90W Tc Surface Mount DPAK
得捷:
MOSFET N-CH 800V 6.5A DPAK
立创商城:
N沟道 800V 6.5A
欧时:
### N 通道 MDmesh™,800V/1500V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
e络盟:
晶体管, MOSFET, N沟道, 3.25 A, 800 V, 0.95 ohm, 10 V, 4 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STD7NM80 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 90000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 800V 6.5A 3-Pin2+Tab DPAK T/R
富昌:
STD7ND80 系列 N 沟道 800 V 1.05 Ω MDmesh™ 功率 Mosfet - TO-252
Verical:
Trans MOSFET N-CH 800V 6.5A 3-Pin2+Tab DPAK T/R
力源芯城:
800V,0.95Ω,6.5A,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 800V 6.5A DPAK
Win Source:
MOSFET N-CH 800V 6.5A DPAK
针脚数 3
漏源极电阻 0.95 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 4 V
漏源极电压Vds 800 V
连续漏极电流Ids 3.25 A
上升时间 8 ns
正向电压Max 1.3 V
输入电容Ciss 620pF @25VVds
额定功率Max 90 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD7NM80 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP7NM80 意法半导体 | 完全替代 | STD7NM80和STP7NM80的区别 |
FQD2N80TM 飞兆/仙童 | 功能相似 | STD7NM80和FQD2N80TM的区别 |
STD7NM80-1 意法半导体 | 功能相似 | STD7NM80和STD7NM80-1的区别 |