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N 通道 MDmesh™,600V/650V,STMicroelectronics
得捷:
MOSFET N-CH 600V 6.5A TO220FP
欧时:
STMicroelectronics MDmesh 系列 Si N沟道 MOSFET STF9NM60N, 6.5 A, Vds=600 V, 3引脚 TO-220FP封装
贸泽:
MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
e络盟:
晶体管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
艾睿:
Make an effective common gate amplifier using this STF9NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 25000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology.
安富利:
Trans MOSFET N-CH 600V 6.5A 3-Pin3+Tab TO-220FP Tube
富昌:
N-Channel 600 V 745 mΩ 17.4 nC Flange Mount MDmesh™ II Power Mosfet - TO-220FP
Chip1Stop:
Trans MOSFET N-CH 600V 6.5A 3-Pin3+Tab TO-220FP Tube
Verical:
Trans MOSFET N-CH 600V 6.5A 3-Pin3+Tab TO-220FP Tube
Newark:
# STMICROELECTRONICS STF9NM60N Power MOSFET, N Channel, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
力源芯城:
600V,0.63Ω,6.5A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 600V 6.5A TO220FP
针脚数 3
漏源极电阻 0.63 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 6.5A
上升时间 23 ns
输入电容Ciss 452pF @50VVds
额定功率Max 25 W
下降时间 26.7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 25W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STF9NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SPA06N60C3 英飞凌 | 功能相似 | STF9NM60N和SPA06N60C3的区别 |