STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
The is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and ultra low gate charge. This Power MOSFET is designed using ST"s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in ON-resistance and ultra-low gate charge for applications which require superior power density and high efficiency.
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- Worldwide best FOMfigure of merit
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- 100% Avalanche tested
针脚数 3
漏源极电阻 1 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 4 V
输入电容 450 pF
漏源极电压Vds 950 V
连续漏极电流Ids 9A
上升时间 12 ns
输入电容Ciss 450pF @100VVds
额定功率Max 90 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, Power Management, Industrial, 电源管理, Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD6N95K5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD15NF10T4 意法半导体 | 类似代替 | STD6N95K5和STD15NF10T4的区别 |
STD3NK60ZT4 意法半导体 | 类似代替 | STD6N95K5和STD3NK60ZT4的区别 |
STD17NF25 意法半导体 | 类似代替 | STD6N95K5和STD17NF25的区别 |