N沟道500V ， 0.29欧姆， 11A ， FDmesh II功率MOSFET （具有快速二极管）的D2PAK ， DPAK ， TO- 220FP N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET with fast diode in D2PAK, DPAK, TO-220FP
N-Channel 500V 11A Tc 100W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 500V 11A D2PAK
立创商城:
N沟道 500V 11A
贸泽:
MOSFET N-channel 500 V 11 A Fdmesh
艾睿:
Increase the current or voltage in your circuit with this STB12NM50ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 100000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Transistor MOSFET N-CH 500V 11A 3-Pin D2PAK T/R
富昌:
N-Channel 550 V 0.38 Ω Surface Mount FDmesh II Power MosFet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 500V 11A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 500V 11A 3-Pin2+Tab D2PAK T/R
力源芯城:
500V,11A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 500V 11A D2PAK
Win Source:
MOSFET N-CH 500V 11A D2PAK
通道数 1
漏源极电阻 380 mΩ
极性 N-CH
耗散功率 100 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 11A
上升时间 15 ns
输入电容Ciss 850pF @50VVds
额定功率Max 100 W
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 100W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free