Trans MOSFET N-CH 650V 2.8A 4Pin Power Flat EP T/R
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics" power MOSFET can provide a solution. Its maximum power dissipation is 2800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
耗散功率 2.8 W
阈值电压 4 V
漏源极电压Vds 650 V
上升时间 8 ns
输入电容Ciss 1865pF @100VVds
额定功率Max 125 W
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.8W Ta, 125W Tc
安装方式 Surface Mount
引脚数 5
封装 PowerFLAT-8
封装 PowerFLAT-8
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free