















STMICROELECTRONICS STP9NK60ZFP 功率场效应管, MOSFET, N沟道, 7 A, 600 V, 950 mohm, 10 V, 3.75 V
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STP9NK60ZFP, 7 A, Vds=600 V, 3引脚 TO-220FP封装
立创商城:
N沟道 600V 7A
得捷:
MOSFET N-CH 600V 7A TO220FP
贸泽:
MOSFET N-Ch, 600V-0.85ohms 7A
e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 7 A, 0.95 ohm, TO-220FP, 通孔
艾睿:
Make an effective common source amplifier using this STP9NK60ZFP power MOSFET from STMicroelectronics. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology.
安富利:
Trans MOSFET N-CH 600V 7A 3-Pin3+Tab TO-220FP Tube
Chip1Stop:
Trans MOSFET N-CH 600V 7A 3-Pin3+Tab TO-220FP Tube
TME:
Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP
Verical:
Trans MOSFET N-CH 600V 7A 3-Pin3+Tab TO-220FP Tube
Newark:
# STMICROELECTRONICS STP9NK60ZFP Power MOSFET, N Channel, 7 A, 600 V, 950 mohm, 10 V, 3.75 V
Win Source:
MOSFET N-CH 600V 7A TO-220FP
针脚数 3
漏源极电阻 0.95 Ω
极性 N-Channel
耗散功率 30 W
阈值电压 3.75 V
漏源极电压Vds 600 V
连续漏极电流Ids 7.00 A
上升时间 17 ns
输入电容Ciss 1110pF @25VVds
额定功率Max 30 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 30W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP9NK60ZFP ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRFIB6N60APBF 威世 | 功能相似 | STP9NK60ZFP和IRFIB6N60APBF的区别 |
FQPF7N60 飞兆/仙童 | 功能相似 | STP9NK60ZFP和FQPF7N60的区别 |
STP8NC60FP 意法半导体 | 功能相似 | STP9NK60ZFP和STP8NC60FP的区别 |