STP4NK60Z

STMICROELECTRONICS  STP4NK60Z  功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

### MOSFET ，STMicroelectronics

得捷:
MOSFET N-CH 600V 4A TO220AB

立创商城:
N沟道 600V 4A

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STP4NK60Z, 4 A, Vds=600 V, 3引脚 TO-220封装

e络盟:
晶体管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V

艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STP4NK60Z power MOSFET is for you. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 4A 3-Pin3+Tab TO-220 T/R

富昌:
STP4NK60Z系列 N沟道 600 V 2 Ohm SuperMESH 功率MOSFET - TO-220-3

TME:
Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3

Verical:
Trans MOSFET N-CH 600V 4A 3-Pin3+Tab TO-220AB Tube

Newark:
Power MOSFET, N Channel, 4 A, 600 V, 2 ohm, 10 V, 3.75 V

儒卓力:
**N-CH 600V 4A 2000mOhm TO220-3 **

Win Source:
MOSFET N-CH 600V 4A TO-220