P沟道30V - 0.016ohm - 7A SO- 8 STripFET⑩ II功率MOSFET P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET⑩ II POWER MOSFET
As an alternative to traditional transistors, the power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
额定电压DC -30.0 V
额定电流 -7.00 A
漏源极电阻 0.016 Ω
极性 P-Channel
耗散功率 2.5 W
阈值电压 1.6 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 7.00 A
上升时间 54 ns
输入电容Ciss 2600pF @25VVds
额定功率Max 2.5 W
下降时间 23 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Tc
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STS7PF30L ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STS6PF30L 意法半导体 | 类似代替 | STS7PF30L和STS6PF30L的区别 |
STS3DPF60L 意法半导体 | 类似代替 | STS7PF30L和STS3DPF60L的区别 |
FDS4435BZ 飞兆/仙童 | 功能相似 | STS7PF30L和FDS4435BZ的区别 |