



N 通道 STripFET™ F3,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F3,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 75V 180A H2PAK-6
欧时:
STMicroelectronics STripFET F3 系列 Si N沟道 MOSFET STH245N75F3-6, 180 A, Vds=75 V, 6引脚 H2PAK-6封装
贸泽:
MOSFET Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STH245N75F3-6 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet iii technology.
安富利:
Trans MOSFET N-CH 75V 180A 6-Pin H2PAK T/R
Verical:
Trans MOSFET N-CH 75V 180A Automotive 7-Pin6+Tab H2PAK T/R
极性 N-CH
耗散功率 300 W
漏源极电压Vds 75 V
连续漏极电流Ids 180A
上升时间 70 ns
输入电容Ciss 6800pF @25VVds
下降时间 15 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 6
封装 TO-263-7
长度 10.4 mm
宽度 8.9 mm
高度 4.6 mm
封装 TO-263-7
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅