STP11N52K3

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STP11N52K3概述

N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics

N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics


欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STP11N52K3, 10 A, Vds=525 V, 4引脚


得捷:
MOSFET N-CH 525V 10A TO220


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STP11N52K3 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


力源芯城:
525V,0.41Ω,10A,N沟道功率MOSFET


STP11N52K3中文资料参数规格
技术参数

漏源极电阻 0.41 Ω

极性 N-Channel

耗散功率 125 W

阈值电压 3.75 V

漏源极电压Vds 525 V

上升时间 18 ns

输入电容Ciss 1400pF @50VVds

额定功率Max 125 W

下降时间 42 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 125W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.4 mm

宽度 4.6 mm

高度 15.75 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STP11N52K3
型号: STP11N52K3
描述:N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
替代型号STP11N52K3
型号/品牌 代替类型 替代型号对比

STP11N52K3

ST Microelectronics 意法半导体

当前型号

当前型号

STB11N52K3

意法半导体

完全替代

STP11N52K3和STB11N52K3的区别

STB11NK50ZT4

意法半导体

功能相似

STP11N52K3和STB11NK50ZT4的区别

R5011FNX

罗姆半导体

功能相似

STP11N52K3和R5011FNX的区别

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