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N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STP11N52K3, 10 A, Vds=525 V, 4引脚
得捷:
MOSFET N-CH 525V 10A TO220
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STP11N52K3 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
力源芯城:
525V,0.41Ω,10A,N沟道功率MOSFET
漏源极电阻 0.41 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 3.75 V
漏源极电压Vds 525 V
上升时间 18 ns
输入电容Ciss 1400pF @50VVds
额定功率Max 125 W
下降时间 42 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP11N52K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB11N52K3 意法半导体 | 完全替代 | STP11N52K3和STB11N52K3的区别 |
STB11NK50ZT4 意法半导体 | 功能相似 | STP11N52K3和STB11NK50ZT4的区别 |
R5011FNX 罗姆半导体 | 功能相似 | STP11N52K3和R5011FNX的区别 |