STMICROELECTRONICS STP60NF10 晶体管, MOSFET, N沟道, 40 A, 100 V, 19 mohm, 10 V, 3 V
N 通道 STripFET™ II,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
立创商城:
N沟道 100V 80A
得捷:
MOSFET N-CH 100V 80A TO220AB
欧时:
STMicroelectronics STripFET II 系列 Si N沟道 MOSFET STP60NF10, 80 A, Vds=100 V, 3引脚 TO-220封装
e络盟:
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 3 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STP60NF10 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 300000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes stripfet ii technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 100V 80A 3-Pin3+Tab TO-220 Tube
富昌:
STP60NF10 系列 100 V 23 mOhm N 沟道 STripFET II 功率 MosFet - TO-220
Chip1Stop:
Trans MOSFET N-CH 100V 80A Automotive 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 100V; 66A; 300W; TO220-3
Verical:
Trans MOSFET N-CH 100V 80A Automotive 3-Pin3+Tab TO-220 Tube
Newark:
The STP60NF10 is a 100V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
儒卓力:
**N-CH 100V 80A 23mOhm TO220-3 **
Win Source:
MOSFET N-CH 100V 80A TO-220
额定电压DC 100 V
额定电流 80.0 A
针脚数 3
漏源极电阻 19 mΩ
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 40.0 A
上升时间 56 ns
输入电容Ciss 4270pF @25VVds
额定功率Max 300 W
下降时间 23 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 通信与网络, 工业, Communications & Networking, 计算机和计算机周边, Computers & Computer Peripherals
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP60NF10 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB60NF10-1 意法半导体 | 类似代替 | STP60NF10和STB60NF10-1的区别 |
IRF3710PBF 国际整流器 | 功能相似 | STP60NF10和IRF3710PBF的区别 |
HUF75639P3 飞兆/仙童 | 功能相似 | STP60NF10和HUF75639P3的区别 |