STD4NK50ZD

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STD4NK50ZD概述

N沟道500V - 2.4ヘ - 3A - TO- 220 - TO- 220FP- DPAK - IPAK快速二极管SuperMESH⑩功率MOSFET N-channel 500V - 2.4ヘ - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH⑩ Power MOSFET

Description

The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology.

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeability

Applications

■ Switching application


得捷:
MOSFET N-CH 500V 3A DPAK


艾睿:
This STD4NK50ZD power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 500V 3A 3-Pin2+Tab DPAK T/R


Win Source:
MOSFET N-CH 500V 3A DPAK


STD4NK50ZD中文资料参数规格
技术参数

额定电压DC 500 V

额定电流 3.00 A

漏源极电阻 2.70 Ω

极性 N-Channel

耗散功率 45W Tc

输入电容 310 pF

栅电荷 12.0 nC

漏源极电压Vds 500 V

漏源击穿电压 500 V

栅源击穿电压 ±30.0 V

连续漏极电流Ids 3.00 A

上升时间 15.5 ns

输入电容Ciss 310pF @25VVds

额定功率Max 45 W

下降时间 22 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 45W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买STD4NK50ZD
型号: STD4NK50ZD
描述:N沟道500V - 2.4ヘ - 3A - TO- 220 - TO- 220FP- DPAK - IPAK快速二极管SuperMESH⑩功率MOSFET N-channel 500V - 2.4ヘ - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH⑩ Power MOSFET
替代型号STD4NK50ZD
型号/品牌 代替类型 替代型号对比

STD4NK50ZD

ST Microelectronics 意法半导体

当前型号

当前型号

STD4NK50ZT4

意法半导体

类似代替

STD4NK50ZD和STD4NK50ZT4的区别

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