N沟道500V - 2.4ヘ - 3A - TO- 220 - TO- 220FP- DPAK - IPAK快速二极管SuperMESH⑩功率MOSFET N-channel 500V - 2.4ヘ - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH⑩ Power MOSFET
Description
The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology.
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeability
Applications
■ Switching application
得捷:
MOSFET N-CH 500V 3A DPAK
艾睿:
This STD4NK50ZD power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 500V 3A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 500V 3A DPAK
额定电压DC 500 V
额定电流 3.00 A
漏源极电阻 2.70 Ω
极性 N-Channel
耗散功率 45W Tc
输入电容 310 pF
栅电荷 12.0 nC
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 3.00 A
上升时间 15.5 ns
输入电容Ciss 310pF @25VVds
额定功率Max 45 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD4NK50ZD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD4NK50ZT4 意法半导体 | 类似代替 | STD4NK50ZD和STD4NK50ZT4的区别 |