STB80N20M5

200V,0.019Ω,65A,N沟道功率MOSFET

N-Channel 200V 61A Tc 190W Tc Surface Mount D2PAK

得捷:
MOSFET N-CH 200V 61A D2PAK

贸泽:
MOSFET N-Ch 200V 0.019 61A Mdmesh V

e络盟:
晶体管, MOSFET, N沟道, 61 A, 200 V, 0.019 ohm, 10 V, 4 V

艾睿:
As an alternative to traditional transistors, the STB80N20M5 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 190000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.

富昌:
STB80N20M5 系列 200 V 23 mOhm N 沟道 MDmesh™ V 功率 Mosfet - D2PAK

Chip1Stop:
Trans MOSFET N-CH 200V 61A 3-Pin2+Tab D2PAK T/R

TME:
Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK

Verical:
Trans MOSFET N-CH Si 200V 61A 3-Pin2+Tab D2PAK T/R

力源芯城:
200V,0.019Ω,65A,N沟道功率MOSFET

DeviceMart:
MOSFET N-CH 200V 61A D2PAK

Win Source:
MOSFET N-CH 200V 61A D2PAK