STD120N4F6

N沟道40 V ， 3.5 MI © ， 80 A， DPAK ， D²PAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

N-Channel 40V 80A Tc 110W Tc Surface Mount DPAK

得捷:
MOSFET N-CH 40V 80A DPAK

艾睿:
Compared to traditional transistors, STD120N4F6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 110000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 40V 80A 3-Pin2+Tab DPAK T/R

富昌:
STD120N4F6 系列 N 沟道 40 V 4 mOhm STripFET VI 功率 Mosfet - TO-252-3

Chip1Stop:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab DPAK T/R

Verical:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab DPAK T/R

力源芯城:
40V,3.5mΩ,80A,N沟道功率MOSFET

DeviceMart:
MOSFET N-CH 40V 80A DPAK

Win Source:
MOSFET N-CH 40V 80A DPAK