N 通道 STripFET™ F6,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F6,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
立创商城:
P沟道 40V
得捷:
MOSFET P-CH 40V POWERFLAT
欧时:
STMicroelectronics STripFET F6 系列 Si P沟道 MOSFET STL8P4LLF6, 8 A, Vds=40 V, 8引脚 PowerFLAT封装
贸泽:
MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
e络盟:
晶体管, MOSFET, P沟道, -8 A, -40 V, 0.0175 ohm, -10 V, -2.5 V
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STL8P4LLF6 power MOSFET is for you. Its maximum power dissipation is 2900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with stripfet f6 technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET P-CH 40V 8A 8-Pin PowerFLAT T/R
Verical:
Trans MOSFET P-CH 40V 8A 8-Pin Power Flat EP T/R
通道数 1
针脚数 8
漏源极电阻 20.5 mΩ
极性 P-CH
耗散功率 2.9 W
阈值电压 1V ~ 2.5V
漏源极电压Vds 40 V
漏源击穿电压 40 V
连续漏极电流Ids 8A
上升时间 47 ns
输入电容Ciss 2850pF @25VVds
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.9W Ta
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-8
长度 3.25 mm
宽度 3.1 mm
高度 0.9 mm
封装 PowerFLAT-8
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅