













N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 800V 2A DPAK
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STD2N80K5, 2 A, Vds=800 V, 3引脚 DPAK TO-252封装
立创商城:
N沟道 800V 2A
贸泽:
MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected
e络盟:
晶体管, MOSFET, N沟道, 2 A, 800 V, 4.5 ohm, 10 V, 4 V
艾睿:
Create an effective common drain amplifier using this STD2N80K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh 5 technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 800V 2A 3-Pin DPAK T/R
富昌:
N-Channel 800 V 4.5 Ω 45 W 9.5 nC Surface Mount Power Mosfet - DPAK
Chip1Stop:
Trans MOSFET N-CH 800V 2A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
Verical:
Trans MOSFET N-CH 800V 2A 3-Pin2+Tab DPAK T/R
通道数 1
针脚数 3
漏源极电阻 3.5 Ω
极性 N-CH
耗散功率 45 W
阈值电压 4 V
输入电容 105 pF
漏源极电压Vds 800 V
漏源击穿电压 800 V
连续漏极电流Ids 2A
上升时间 12 ns
输入电容Ciss 105pF @100VVds
额定功率Max 110 W
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free